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Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Abstract:

We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein t...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1088/1361-6528/aaa2e6

Authors


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Institution:
University of Oxford
Division:
MPLS Division
Department:
Engineering Science
Role:
Author
ORCID:
0000-0002-1052-9202
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Engineering Science
Role:
Author
ORCID:
0000-0001-9918-8223
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Engineering Science
Role:
Author
ORCID:
0000-0003-1765-3043
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Engineering Science
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Engineering Science
Oxford college:
Jesus College
Role:
Author
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Publisher:
IOP Publishing Publisher's website
Journal:
Nanotechnology Journal website
Volume:
29
Issue:
7
Article number:
075202
Publication date:
2018-01-11
Acceptance date:
2017-12-19
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
Pmid:
29324436
Source identifiers:
821690
Language:
English
Keywords:
Pubs id:
pubs:821690
UUID:
uuid:067b46b8-03b8-4b8d-a7a6-11a18f1791ab
Local pid:
pubs:821690
Deposit date:
2019-07-05

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