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Simulation of heavily irradiated silicon pixel detectors

Abstract:

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publication website:
https://www.slac.stanford.edu/econf/C0604032/proceedings.htm

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Particle Physics
Role:
Author
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Publisher:
SLAC National Accelerator Laboratory Publisher's website
Journal:
Proceedings of the International Symposium on Detector Development for Particle, Astroparticle and Synchrotron Radiation Experiments (SNIC 2006)
Article number:
0014
Series:
eConf
Series number:
0604032
Place of publication:
Stanford, California
Publication date:
2006-04-03
Event title:
International Symposium on Detector Development for Particle, Astroparticle and Synchrotron Radiation Experiments (SNIC 2006)
Event location:
Stanford, California
Event website:
https://www.slac.stanford.edu/econf/C0604032/
Event start date:
2006-04-03T00:00:00Z
Event end date:
2006-04-06T00:00:00Z
Source identifiers:
499871
Language:
English
Pubs id:
pubs:499871
UUID:
uuid:0c0d1042-f820-4aeb-b118-fc4bb9ba37dd
Local pid:
pubs:499871
Deposit date:
2016-07-18

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