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Chemical understanding of resistance drift suppression in Ge–Sn–Te phase-change memory materials

Abstract:

The resistance drift phenomenon observed in amorphous chalcogenide phase-change materials (PCMs) hinders the development of PCM-based neuro-inspired computing devices. It has been observed that the drift in electrical resistance can be effectively reduced by substituting Ge with Sn in the prototype PCM GeTe, forming amorphous (Ge1−xSnx)Te solids. However, the atomistic and chemical origin of such drift suppression phenomenon remains unclear. In this work, we carry out thorough ab initio simul...

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Publication status:
Published
Peer review status:
Peer reviewed

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Files:
Publisher copy:
10.1039/c9tc04810c

Authors


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Division:
MPLS
Department:
Chemistry
Sub department:
Inorganic Chemistry
Oxford college:
St Anne's College
Role:
Author
ORCID:
0000-0001-6873-0278
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Publisher:
Royal Society of Chemistry Publisher's website
Journal:
Journal of Materials Chemistry C Journal website
Volume:
8
Issue:
1
Pages:
71-77
Publication date:
2019-11-11
Acceptance date:
2019-11-08
DOI:
EISSN:
2050-7534
ISSN:
2050-7526
Language:
English
Keywords:
Pubs id:
1084115
Local pid:
pubs:1084115
Deposit date:
2020-02-08

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