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GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE

Abstract:

The reaction mechanism involved in the growth of InxGa1-xAs lattice matched to InP by chemical beam epitaxy (CBE) was investigated using growth and modulated beam mass spectrometry studies. Emphasis was placed on elucidating how variations in substrate temperature, indium composition and arsenic overpressure influence growth kinetics and how sensitive changes in experimental conditions bring about deviations in the ideal stoichiometry (In0.53Ga0.47As) required for lattice matching to InP. Our...

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Publication status:
Published

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Volume:
120
Issue:
1-4
Pages:
33-38
Host title:
JOURNAL OF CRYSTAL GROWTH
Publication date:
1992-05-01
DOI:
ISSN:
0022-0248
Source identifiers:
43918
Pubs id:
pubs:43918
UUID:
uuid:38b9f485-661f-49d1-b8ab-6084dcd4fafd
Local pid:
pubs:43918
Deposit date:
2012-12-19

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