Conference item
GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
- Abstract:
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The reaction mechanism involved in the growth of InxGa1-xAs lattice matched to InP by chemical beam epitaxy (CBE) was investigated using growth and modulated beam mass spectrometry studies. Emphasis was placed on elucidating how variations in substrate temperature, indium composition and arsenic overpressure influence growth kinetics and how sensitive changes in experimental conditions bring about deviations in the ideal stoichiometry (In0.53Ga0.47As) required for lattice matching to InP. Our...
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- Publication status:
- Published
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- Publisher copy:
- 10.1016/0022-0248(92)90360-U
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Bibliographic Details
- Volume:
- 120
- Issue:
- 1-4
- Pages:
- 33-38
- Host title:
- JOURNAL OF CRYSTAL GROWTH
- Publication date:
- 1992-05-01
- DOI:
- ISSN:
-
0022-0248
- Source identifiers:
-
43918
Item Description
- Pubs id:
-
pubs:43918
- UUID:
-
uuid:38b9f485-661f-49d1-b8ab-6084dcd4fafd
- Local pid:
- pubs:43918
- Deposit date:
- 2012-12-19
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- Copyright date:
- 1992
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