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The surface passivation mechanism of graphene oxide for crystalline silicon

Abstract:

We have recently demonstrated that low surface recombination velocities on Si crystals are achievable from room temperature graphene oxide (GO) deposition. Intrinsic properties of this material make it an appealing candidate for surface passivation in solar cells. There is, however, very little literature on the passivation mechanisms of GO and further understanding is required. In this work we have thus studied GO/SiO2/Si interface interactions by X-ray photoelectron spectroscopy (XPS). From...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1109/PVSC40753.2019.8980620

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
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Publisher:
IEEE Publisher's website
Pages:
1931-1934
Publication date:
2020-02-06
Acceptance date:
2019-04-01
Event title:
IEEE 46th Photovoltaic Specialists Conference (PVSC 2019)
Event location:
Chicago, Illinois, USA
Event start date:
2019-06-16T00:00:00Z
Event end date:
2019-06-21T00:00:00Z
DOI:
EISBN:
9781728104942
ISSN:
0160-8371
ISBN:
9781728104959
Language:
English
Keywords:
Pubs id:
1098838
Local pid:
pubs:1098838
Deposit date:
2021-01-11

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