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Controlling surface carrier density via a PEDOT:PSS gate: An application to the study of silicon-dielectric interface recombination

Abstract:

This communication reports a technique to control the surface carrier population of silicon during photo-conductance decay measurements, by using a semi-transparent PEDOT:PSS gate. The potential of this technique has been demonstrated by characterizing carrier-dependent surface recombination of 1 𝛺cm n-type float zone silicon, passivated with dielectric stack layers of either SiO2, SiO2/SiNx, a-Si/SiOx, a-Si/SiOx/SiNx, AlOx, or AlOx/SiNx. Carrier density at the Si-dielectric interface has bee...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1002/solr.201800172

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Institution:
University of Oxford
Division:
Maths, Physical & Life Sciences
Department:
Materials
Oxford college:
Exeter College
Role:
Author
ORCID:
0000-0002-5395-5850
Publisher:
Wiley Publisher's website
Journal:
Solar RRL Journal website
Volume:
2
Issue:
10
Article number:
1800172
Publication date:
2018-08-20
Acceptance date:
2018-07-31
DOI:
EISSN:
2367-198X
Source identifiers:
897029
Keywords:
Pubs id:
pubs:897029
UUID:
uuid:3a6cf49b-4c06-4a36-a28b-84100f429ceb
Local pid:
pubs:897029
Deposit date:
2018-08-09

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