Journal article
Controlling surface carrier density via a PEDOT:PSS gate: An application to the study of silicon-dielectric interface recombination
- Abstract:
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This communication reports a technique to control the surface carrier population of silicon during photo-conductance decay measurements, by using a semi-transparent PEDOT:PSS gate. The potential of this technique has been demonstrated by characterizing carrier-dependent surface recombination of 1 𝛺cm n-type float zone silicon, passivated with dielectric stack layers of either SiO2, SiO2/SiNx, a-Si/SiOx, a-Si/SiOx/SiNx, AlOx, or AlOx/SiNx. Carrier density at the Si-dielectric interface has bee...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Accepted manuscript, pdf, 583.4KB)
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- Publisher copy:
- 10.1002/solr.201800172
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Authors
Funding
Bibliographic Details
- Publisher:
- Wiley Publisher's website
- Journal:
- Solar RRL Journal website
- Volume:
- 2
- Issue:
- 10
- Article number:
- 1800172
- Publication date:
- 2018-08-20
- Acceptance date:
- 2018-07-31
- DOI:
- EISSN:
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2367-198X
- Source identifiers:
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897029
Item Description
- Keywords:
- Pubs id:
-
pubs:897029
- UUID:
-
uuid:3a6cf49b-4c06-4a36-a28b-84100f429ceb
- Local pid:
- pubs:897029
- Deposit date:
- 2018-08-09
Terms of use
- Copyright holder:
- John Wiley & Sons, Ltd
- Copyright date:
- 2018
- Notes:
- © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim This is the accepted manuscript version of the article. The final version is available online from Wiley at: https://doi.org/10.1002/solr.201800172
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