Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals

Thesis

An experimental technique based on the immobilisation of dislocations by segregation of impurity atoms to the dislocation core (dislocation locking) has been developed and used to investigate the critical conditions for slip occurrence in Czochralski-grown and nitrogen-doped floating-zone-grown silicon crystals.

The accumulation of nitrogen and oxygen impurities along a dislocation and the resulting dislocation locking effect has been investigated in silicon samples subjected to diff...

Expand abstract

Authors: Giannattasio, A

• Publication date: 2004
• Type of award: DPhil
• Level of award: Doctoral
• Awarding institution: University of Oxford
• Language: English
• Keywords: nitrogen; silicon; precipitation; oxygen; dislocation; diffusivity
• Subjects: Silicon; Defect analysis; Single crystal semiconductors; Materials Sciences