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Cryogenic two-photon laser photolithography with SU-8

Abstract:
We have shown that photolithography can be used to create alignment markers on a semiconductor substrate at cryogenic temperatures. The epoxy resist SU-8 can be exposed effectively by two-photon absorption at a temperature of 4 K. By this means a spectroscopy apparatus can be used to find the positions of randomly distributed structures at low temperatures, such as InGaAs/GaAs quantum dots, and mark their positions. We present a systematic study of the optical exposure parameters for cryogenic two-photon laser photolithography with SU-8.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1063/1.2194311

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Role:
Author
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Funding agency for:
Sharp, D
Grant:
FP6/2003/IST/2-511616
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Funding agency for:
Turberfield, A
Grant:
FP6/2003/IST/2-511616
Publisher:
American Institute of Physics Publisher's website
Journal:
Applied Physics Letters Journal website
Volume:
88
Issue:
14
Pages:
143123
Publication date:
2006-04-01
DOI:
ISSN:
0003-6951
Language:
English
Keywords:
Subjects:
UUID:
uuid:4323c7c0-9bbd-4031-8003-5bd6ddfcd5da
Local pid:
ora:983
Deposit date:
2008-03-14

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