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Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot

Abstract:

We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1103/PhysRevLett.99.197403

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Research group:
Taylor, CMP
Oxford college:
Queen's College
Role:
Author
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Institution:
University of Cambridge
Department:
Department of Materials Science and Metallurgy
Role:
Author
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Institution:
University of Sheffield
Department:
National Centre for III-V Technologies, Department of Electronic and Electrical Engineering
Role:
Author
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Institution:
University of Cambridge
Department:
Department of Materials Science and Metallurgy
Role:
Author
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Institution:
University of Cambridge
Department:
Department of Materials Science and Metallurgy
Role:
Author
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Funding agency for:
Jarjour, A
Grant:
GR/S82176/01
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Funding agency for:
Taylor, R
Grant:
GR/S82176/01
Publisher:
American Physical Society Publisher's website
Journal:
Physical Review Letters Journal website
Volume:
99
Issue:
19
Pages:
197403
Publication date:
2007-11-01
DOI:
EISSN:
1079-7114
ISSN:
0031-9007
Language:
English
Keywords:
Subjects:
UUID:
uuid:5fbfe905-6b78-4cdb-878a-36a0f5bff2cd
Local pid:
ora:1616
Deposit date:
2008-03-14

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