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The influence of nitrogen on dislocation locking in float-zone silicon

Abstract:

Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 x 10(15) cm(-3) and 3 x 10(14) cm(-3). The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and temperature (550 to 830 degrees C). For all conditions investigated the locking effect was found to increase linearly with annealing time before saturating. It is assumed that the rate of increas...

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Publication status:
Published

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Journal:
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI
Volume:
108-109
Pages:
139-144
Publication date:
2005-01-01
Event title:
11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005)
ISSN:
1012-0394
Source identifiers:
12771
ISBN:
3908451132
Keywords:
Pubs id:
pubs:12771
UUID:
uuid:8522cfa2-2ae9-452c-8935-63820f11f647
Local pid:
pubs:12771
Deposit date:
2012-12-19

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