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Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

Abstract:

InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
Physics of Semiconductors, Pts A and B
Volume:
772
Pages:
865-866
Publication date:
2005-01-01
Event title:
27th International Conference on the Physics of Semiconductors (ICPS-27)
ISSN:
0094-243X
Source identifiers:
16184
ISBN:
0735402574
Keywords:
Pubs id:
pubs:16184
UUID:
uuid:8ba4a1be-a8b4-45ee-a00f-274e56f914ce
Local pid:
pubs:16184
Deposit date:
2012-12-19

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