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Enhanced oxygen diffusion in highly doped p-type Czochralski silicon

Abstract:

The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon (Cz-Si) with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350-550°C temperature range, and the stress required to bring about dislocation unlocking stress was found to increase with annealing time due to oxygen diffusion to the dislocation core. The dislocation unlocking stress was measu...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1063/1.2369536

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Research group:
Semiconductor Group
Oxford college:
Wolfson College
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Research group:
Semiconductor Group
Oxford college:
St Anne's College
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Research group:
Semiconductor Group
Role:
Author
More by this author
Institution:
"MEMC Electronic Materials SpA, Novara, Italy"
Role:
Author
Publisher:
American Institute of Physics Publisher's website
Journal:
Journal of Applied Physics Journal website
Volume:
100
Issue:
10
Pages:
103531
Publication date:
2006-11-01
DOI:
Language:
English
Keywords:
Subjects:
UUID:
uuid:979328f3-ae2d-4ef3-829b-70740b0cfa91
Local pid:
ora:1658
Deposit date:
2008-03-14

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