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Thesis

Atom probe tomography analysis of near surface, low concentration impurities in single crystal silicon

Abstract:

Advances in semiconductor device manufacture have led to modern nanoelectronic devices incorporating features with dimensions less than ten nanometres, fabricated within tens of nanometres of silicon substrate surfaces. To refine materials processing and optimise the correlation between fabricated nanostructures and device performance, high resolution characterisation techniques, such as atom probe tomography (APT), are required. In this thesis, surface sensitive specimen preparation metho...

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author

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Role:
Supervisor
Role:
Supervisor
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Language:
English
Subjects:
UUID:
uuid:c3644a50-bfc5-40ec-9bac-ab46669c0864
Deposit date:
2020-02-21

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